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STGW20NB60K Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STGW20NB60K
Description  N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH??IGBT
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW20NB60K Fiches technique(HTML) 1 Page - STMicroelectronics

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May 2003
STGW20NB60K
N-CHANNEL 20A - 600V -TO-247
SHORT CIRCUIT PROOF PowerMESH™ IGBT
s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (Vcesat)
s
LOW ON-LOSSES
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
OFF LOSSES INCLUDE TAIL CURRENT
s
VERY HIGH FREQUENCY OPERATION
s
SHORT CIRCUIT RATED
s
LATCH CURRENT FREE OPERATION
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “K” identifies a family
optimized for high frequency motor control
applications with short circuit withstand capability.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
U.P.S.
s
WELDING EQUIPMENTS
ABSOLUTE MAXIMUM RATINGS
TYPE
VCES
VCE(sat)
IC
STGW20NB60K
600 V
< 2.8 V20 A
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS =0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuos) at TC = 25°C
40
A
IC
Collector Current (continuos) at TC = 100°C
20
A
ICM ( )
Collector Current (pulsed)
80
A
Tsc
Short Circuit Withstand
10
µs
PTOT
Total Dissipation at TC = 25°C
150
W
Derating Factor
1
W/°C
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM


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