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STE48NM50 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STE48NM50
Description  N-CHANNEL 500V - 0.08ohm - 48A ISOTOP MDmesh?줡ower MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE48NM50 Fiches technique(HTML) 3 Page - STMicroelectronics

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STE48NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 250V, ID = 24 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
40
ns
tr
Rise Time
35
ns
Qg
Total Gate Charge
VDD = 400 V, ID = 48 A,
VGS = 10 V
87
117
nC
Qgs
Gate-Source Charge
23
nC
Qgd
Gate-Drain Charge
42
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 400 V, ID = 48 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
18
ns
tf
Fall Time
23
ns
tc
Cross-over Time
44
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
48
A
ISDM (2)
Source-drain Current (pulsed)
192
A
VSD (1)
Forward On Voltage
ISD = 48 A, VGS = 0
1.5
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
520
7.8
30
ns
µC
A
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
680
11.2
33
ns
µC
A
Thermal Impedence
Safe Operating Area


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