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STD8NS25 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STD8NS25
Description  N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERLAY??MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD8NS25 Fiches technique(HTML) 3 Page - STMicroelectronics

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STD8NS25
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 125 V, ID = 4 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
13
ns
tr
Rise Time
18
ns
Qg
Total Gate Charge
VDD = 200V, ID = 8 A,
VGS = 10V
37
50
nC
Qgs
Gate-Source Charge
5.2
nC
Qgd
Gate-Drain Charge
14.8
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(Voff)
tf
Turn-off- Delay Time
Fall Time
VDD = 125V, ID = 4 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
51
16
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 200V, ID = 8 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
12.5
12.5
28
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
8
A
ISDM (2)
Source-drain Current (pulsed)
32
A
VSD (1)
Forward On Voltage
ISD = 8 A, VGS = 0
1.7
V
trr
Reverse Recovery Time
ISD = 8 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
198
ns
Qrr
Reverse Recovery Charge
1.1
µC
IRRM
Reverse Recovery Current
11.3
A


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