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STD30NF03L Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STD30NF03L
Description  N - CHANNEL 30V - 0.020 ohm - 30A DPAK STripFET POWER MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD30NF03L Fiches technique(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rth j-pc b
Rthj-amb
Rthj-s ink
T l
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
Maximum Lead Temperature F or Soldering Purpose
3.75
100
1.5
275
oC/W
oC/W
oC/W
oC
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
30
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc = 125
oC
1
10
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS
ID = 250
µA1
1.7
2. 5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10 V
ID =15 A
VGS =4.5 V
ID =15 A
0.020
0.028
0.025
0.035
Ω
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
30
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(o n) xRDS(on )max
ID =15 A
13
S
Ciss
Cos s
Crss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0 V
830
230
92
pF
pF
pF
STD30NF03L
2/8


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