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STD10NF10 Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STD10NF10
Description  N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET™ II POWER MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD10NF10 Fiches technique(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD10NF10
4/14
2
Electrical characteristics
(TCASE = 25°C unless otherwise specified)
Table 3.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS = 0
100
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating
VDS = Max rating,
TC = 125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 5A
0.115
0.13
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS = 15V, ID = 5A
20
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
460
70
30
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 80V, ID = 10A
VGS = 10V
15.3
3.7
4.7
21
nC
nC
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 27V, ID = 5A,
RG = 4.7Ω, VGS = 10V
Figure 13 on page 8
16
25
32
8
ns
ns
ns
ns


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