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STGW30N120KD Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STGW30N120KD
Description  30 A - 1200 V - short circuit rugged IGBT
Download  13 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW30N120KD Fiches technique(HTML) 3 Page - STMicroelectronics

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STGW30N120KD
Electrical ratings
3/13
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
1200
V
IC
(1)
1.
Calculated according to the iterative formula:
Collector current (continuous) at 25 °C
60
A
IC
(1)
Collector current (continuous) at 100 °C
30
A
ICL
(2)
2.
Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V
Turn-off latching current
100
A
ICP
(3)
3.
Pulse width limited by max. junction temperature allowed
Pulsed collector current
100
A
VGE
Gate-emitter voltage
±25
V
tscw
Short circuit withstand time, VCE = 0.5 V(BR)CES
Tj = 125 °C, RG = 10 Ω, VGE = 12 V
10
µs
PTOT
Total dissipation at TC = 25 °C
175
W
IF
Diode RMS forward current at TC = 25 °C
30
A
IFSM
Surge non repetitive forward current tp = 10 ms
sinusoidal
100
A
Tj
Operating junction temperature
– 55 to 125
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case IGBT max.
0.57
°C/W
Rthj-case
Thermal resistance junction-case diode max.
1.6
°C/W
Rthj-amb
Thermal resistance junction-ambient IGBT max.
50
°C/W
I
C
T
C
()
T
JMAX
T
C
R
THJ
C
V
CESAT MAX
()
T
C
I
C
,
()
×
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=


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