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STBV32 Fiches technique(PDF) 2 Page - STMicroelectronics |
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STBV32 Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 7 page THERMAL DATA Rthj-ca se Thermal Resistance Junction-case Max 112 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICEV Collector Cut -of f Current (VBE =-1.5V) VCE = 700V VCE = 700V Tj = 125 oC 1 5 mA mA IEBO Emitter Cut -off Current (IC =0) VEB =9 V 1 mA VCEO(sus ) ∗ Collector-Emitter Sustaining Voltage (IB =0) IC =10 mA L= 25 mH 400 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC =0. 5 A IB =0. 1 A IC =1 A IB =0.25 A IC =1.5 A IB =0.5 A 0.5 1 3 V V V VBE(s at) ∗ Base-Emitter Saturation Voltage IC =0.5 A IB =0.1 A IC =1 A IB =0.25 A 1.0 1.2 V V hFE ∗ DC Current Gain IC =0. 5 A VCE =2 V IC =1 A VCE =2 V 8 5 35 25 tr ts tf RESI STIVE LO AD Rise Time St orage Time Fall Time IC =1 A VCC =125 V IB1 =0.2 A IB2 =-0.2 A Tp=25 µs 1.0 4.0 0.7 µs µs µs ts INDUCTIVE LO AD St orage Time IC =1 A IB1 =0.2 A VBE = -5V L= 50 mH Vcla mp =300 V 0.8 µs ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %. STBV32 2/7 |
Numéro de pièce similaire - STBV32 |
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Description similaire - STBV32 |
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