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STB80NF03L-04 Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STB80NF03L-04
Description  N-CHANNEL 30V - 0.0035 ohm - 80A TO-262/TO-263 STripFET POWER MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB80NF03L-04 Fiches technique(HTML) 1 Page - STMicroelectronics

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STB80NF03L-04
N-CHANNEL 30V - 0.0035
Ω - 80A TO-262/TO-263
STripFET
™ POWER MOSFET
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.0035
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW THRESHOLD DRIVE
s
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s
SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
”Single
Feature
Size
™” strip-based process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
rugged
avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
®
INTERNAL SCHEMATIC DIAGRAM
March 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
VDS
Drain-source Voltage (VGS =0)
30
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)30
V
VGS
G ate-source Volt age
± 20
V
ID
Drain Current (continuous) at Tc =25
oC80
A
ID
Drain Current (continuous) at Tc =100
oC56
A
IDM (
•)
Drain Current (pulsed)
320
A
Ptot
T otal Dissipat ion at Tc =25
oC
210
W
Derating Factor
1.43
W /
o C
dv/dt
Peak Diode Recovery voltage slope
3.5
V/ns
Tstg
Storage Temperature
-65 to 175
o C
Tj
Max. Operating Junction Temperature
175
o C
(
•) Pulse width limited by safe operating area
( 1)ISD
≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
T YPE
VDSS
RDS(on)
ID
STB80NF03L-04
30 V
< 0. 004
80 A
1
2 3
1
3
I
2PAK
TO-262
(suffix ”-1”)
D
2PAK
TO-263
(suffix ”T4”)
1/7


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