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STB7NA40 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STB7NA40
Description  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Download  10 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB7NA40 Fiches technique(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
td(on)
tr
Turn-on Time
Rise Time
VDD = 200 V
ID =3.5 A
RG =47
VGS =10 V
(see test circuit, figure 3)
25
75
35
100
ns
ns
(di/ dt)on
Turn-on Current Slope
VDD = 320 V
ID =7 A
RG =47
VGS =10 V
(see test circuit, f igure 5)
220
A/
µs
Qg
Qgs
Qgd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD =320 V
ID =7 A
VGS =10 V
34
7
15
45
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
tr(Voff)
tf
tc
Off -volt age Rise Time
Fall Time
Cross-over Time
VDD = 320 V
ID =7 A
RG =47
Ω VGS =10 V
(see test circuit, figure 5)
40
25
75
55
35
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
6.5
26
A
A
VSD (
∗)
Forward On Voltage
ISD =6.5 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 7 A
di/dt = 100 A/
µs
VDD =100 V
Tj =150
oC
(see test circuit, figure 5)
380
4. 8
25
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STB7NA40
3/10


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