Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

STB5NA80 Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STB5NA80
Description  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB5NA80 Fiches technique(HTML) 2 Page - STMicroelectronics

  STB5NA80 Datasheet HTML 1Page - STMicroelectronics STB5NA80 Datasheet HTML 2Page - STMicroelectronics STB5NA80 Datasheet HTML 3Page - STMicroelectronics STB5NA80 Datasheet HTML 4Page - STMicroelectronics STB5NA80 Datasheet HTML 5Page - STMicroelectronics STB5NA80 Datasheet HTML 6Page - STMicroelectronics STB5NA80 Datasheet HTML 7Page - STMicroelectronics STB5NA80 Datasheet HTML 8Page - STMicroelectronics STB5NA80 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
THERMAL DATA
Rthj-ca se
Rthj- amb
Rthj- amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead T emperature For Soldering Purpose
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current , Repet itive or Not -Repetitive
(pulse widt h limited by Tj max,
δ <1%)
4.7
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, I
D =IAR,VDD =25 V )
110
mJ
EAR
Repetit ive Avalanche Energy
(pulse widt h limited by Tj max,
δ <1%)
4.5
mJ
IAR
Avalanche Current , Repet itive or Not -Repetitive
(Tc =100
oC, pulse width limited by Tj max, δ <1%)
3A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID = 250
µAVGS = 0
800
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating x0.8
Tc = 125
oC
250
1000
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 30 V
±100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate T hreshold Voltage VDS =VGS
ID =250
µA2.5
3
3.75
V
RDS( on)
St atic Drain-source On
Resistance
VGS =10 V
ID =2. 5 A
VGS =10 V
ID =2.5 A Tc = 100
oC
1.8
2.4
4.8
ID(o n)
On Stat e Drain Current
VDS >ID(on) xRDS(on)max VGS =10 V
4. 7
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on) max
ID =2.5 A
2. 7
5.2
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
1250
140
35
1700
190
50
pF
pF
pF
STB5NA80
2/10


Numéro de pièce similaire - STB5NA80

FabricantNo de pièceFiches techniqueDescription
logo
STMicroelectronics
STB5NA50 STMICROELECTRONICS-STB5NA50 Datasheet
126Kb / 10P
   N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
More results

Description similaire - STB5NA80

FabricantNo de pièceFiches techniqueDescription
logo
STMicroelectronics
STH60N10 STMICROELECTRONICS-STH60N10 Datasheet
246Kb / 11P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP15N05L STMICROELECTRONICS-STP15N05L Datasheet
201Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
November 1996
IRF630FI STMICROELECTRONICS-IRF630FI Datasheet
190Kb / 6P
   N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP3N50XI STMICROELECTRONICS-STP3N50XI Datasheet
289Kb / 7P
   N-CHANNEL enhancement mode power mos transistor
STD2NA60 STMICROELECTRONICS-STD2NA60 Datasheet
172Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STD3N30L STMICROELECTRONICS-STD3N30L Datasheet
170Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STD3NA50 STMICROELECTRONICS-STD3NA50 Datasheet
172Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP53N08 STMICROELECTRONICS-STP53N08 Datasheet
77Kb / 5P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP5N30L STMICROELECTRONICS-STP5N30L Datasheet
198Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP32N05L STMICROELECTRONICS-STP32N05L Datasheet
201Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP32N06L STMICROELECTRONICS-STP32N06L Datasheet
201Kb / 10P
   N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com