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STB5NA80 Fiches technique(PDF) 2 Page - STMicroelectronics |
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STB5NA80 Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 10 page THERMAL DATA Rthj-ca se Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead T emperature For Soldering Purpose 1 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symb ol Parameter Max Valu e Uni t IAR Avalanche Current , Repet itive or Not -Repetitive (pulse widt h limited by Tj max, δ <1%) 4.7 A EAS Single Pulse Avalanche Energy (starting Tj =25 oC, I D =IAR,VDD =25 V ) 110 mJ EAR Repetit ive Avalanche Energy (pulse widt h limited by Tj max, δ <1%) 4.5 mJ IAR Avalanche Current , Repet itive or Not -Repetitive (Tc =100 oC, pulse width limited by Tj max, δ <1%) 3A ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it V(BR)DSS Drain-source Breakdown Volt age ID = 250 µAVGS = 0 800 V IDSS Zero Gat e Voltage Drain Current (VGS =0) VDS =Max Rating VDS =Max Rating x0.8 Tc = 125 oC 250 1000 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 30 V ±100 nA ON ( ∗) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it VGS(th) Gate T hreshold Voltage VDS =VGS ID =250 µA2.5 3 3.75 V RDS( on) St atic Drain-source On Resistance VGS =10 V ID =2. 5 A VGS =10 V ID =2.5 A Tc = 100 oC 1.8 2.4 4.8 Ω Ω ID(o n) On Stat e Drain Current VDS >ID(on) xRDS(on)max VGS =10 V 4. 7 A DYNAMIC Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it gfs ( ∗)Forward Transconductance VDS >ID(on) xRDS(on) max ID =2.5 A 2. 7 5.2 S Ciss Coss Crss Input Capacitance Output Capacit ance Reverse Transfer Capacitance VDS = 25V f = 1MHz VGS = 0 1250 140 35 1700 190 50 pF pF pF STB5NA80 2/10 |
Numéro de pièce similaire - STB5NA80 |
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Description similaire - STB5NA80 |
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