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STB30NS15 Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STB30NS15
Description  N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB30NS15 Fiches technique(HTML) 1 Page - STMicroelectronics

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October 2001
STB30NS15
N-CHANNEL 150V - 0.075
Ω - 30A D2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
s
TYPICAL RDS(on) = 0.075 Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
s
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
TYPE
VDSS
RDS(on)
ID
STB30NS15
150 V
<0.1
30 A
1
3
D2PAK
TO-263
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
•) Pulse width limited by safe operating area.
(1) ISD ≤ 30A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 15A, VDD = 25V
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
150
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
150
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuos) at TC = 25°C
30
A
ID
Drain Current (continuos) at TC = 100°C
21
A
IDM(•)
Drain Current (pulsed)
120
A
Ptot
Total Dissipation at TC = 25°C
110
W
Derating Factor
0.73
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
2
V/ns
EAS (2)
Single Pulse Avalanche Energy
250
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM


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