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InGaAs Photodetectors
SD 004-11-41-211
FEATURES
DESCRIPTION
APPLICATIONS
• Low noise
Ø 0.210 [5.33]
PACKAGE DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
TO-46 PACKAGE
Ø 0.184 [4.67]
0.145 [3.69]
0.065 [1.66]
0.50 [12.7]
4X Ø 0.019 [0.48]
0.016 [0.40]
0.016 [0.40]
Ø .0079 [.200] ACTIVE AREA
0.029 [0.73]
3 ANODE
SCHEMATIC
4 CASE GROUND
1 CATHODE
Ø 0.055 [1.40]
CHIP
2 NOT USED
1
2
3
4
BOTTOM VIEW
• Low dark current
• High response
SYMBOL
PARAMETER
MIN
MAX
UNITS
VBR
Reverse Voltage
75
V
TSTG
Storage Temperature
-55
+100
°C
TO
Operating Temperature
-40
+85
°C
TS
Soldering Temperature*
+260
°C
SPECTRAL RESPONSE
0
0.2
0.4
0.6
0.8
1
1.2
800
900
1000
1100
1200
1300
1400
1500
1600
1700
Wavelength (nM)
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
* 1/16 inch from case for 3 seconds max.
• Communications
• Industrial
• Medical
The SD 004-11-41-211 is a high sensitivity low noise
characteristics InGaAs photodiode packaged in a
leaded hermetic TO-46 metal package.
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ID
Dark Current
VR = 5V
0.8
1.0
nA
RSH
Shunt Resistance
VR = 10 mV
400
1000
MW
CJ
Junction Capacitance
VR = 5V, f = 1 MHz
0.75
0.95
pF
lrange
Spectral Application Range
Spot Scan
800
1700
nm
R
Responsivity
l= 1310nm, VR = 5V
0.83
0.92
A/W
VBR
Breakdown Voltage
I = 1μA
18
V
NEP
Noise Equivalent Power
VR = 5V @ l=1310nm
1.43X10
-14
W/ √ Hz
tr
Response Time**
RL = 50 Ω,VR = 5V
0.18
nS
**Response time of 10% to 90% is specified at 1310nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
REV 1/16/07