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Advanced Photonix, Inc.
UV Enhanced GaN Detectors
PDU-G101A
FEATURES
DESCRIPTION
APPLICATIONS
• 365nm UVB response
PACKAGE DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
TO-46 PACKAGE
.0126 [0.320]
.0134 [0.340]
.016 [0.40] SQ
Ø.181 [4.60]
VIEWING
ANGLE
.500
[12.70]
.055 [1.40]
2X Ø.017
[0.43]
.100 [2.54]
61°
ACTIVE AREA = 0.076 mm ²
CATHODE
ANODE
Ø.210 [5.35]
CHIP
Ø .118 [3.00]
.087 [2.21]
• Visible & NIR blind
• Photovoltaic operation
• High shunt resistance
SYMBOL
PARAMETER
MIN
MAX
UNITS
VBR
Reverse Voltage
5
V
TSTG
Storage Temperature
-40
+90
°C
TO
Operating Temperature
-30
+85
°C
TS
Soldering Temperature*
+260
°C
SPECTRAL RESPONSE
0.000
0.001
0.010
0.100
1.000
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
* 1/16 inch from case for 3 seconds max.
• UVB power meters
• Sun dosimeters
• UV epoxy curing
• UV instrumentation
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
The PDU-G101A is a GaN UV photodiode with a
spectral range from 200nm to 365nm and is ideal for
UVB sensing applications available in a TO-46 can
package.
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISC
Short Circuit Current
UVI = 1
1
nA
ID
Dark Current
VR = 1V
0.05
1
nA
RSH
Shunt Resistance
VR = 10 mV
0.45
1
GW
CJ
Junction Capacitance
VR = 0V, f = 1 MHz
24
pF
lrange
Spectral Application Range
Spot Scan
200
365
nm
R
Responsivity
l= 350nm V, VR = 0 V
0.10
A/W
VBR
Breakdown Voltage
I = 1μA
10
V
NEP
Noise Equivalent Power
VR = 10V @ l=Peak
1X10
-13
W/ √ Hz
tr
Response Time
RL = 1KΩ,VR = 1V
10
15
nS
© 2007 Advanced Photonix, Inc. All rights reserved. Specifications and output data subject to change without notice.
Advanced Photonix, Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
REV 4/19/07