1N4135 datasheet(3/5 Pages) TAITRON

No de pièce	1N4135

Description	500mW Low Noise Zener Diodes

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Fabricant	TAITRON [TAITRON Components Incorporated]

Site Internet	http://www.taitroncomponents.com

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Rev. A/DX 2007-05-15

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500mW Low Noise Zener Diodes

1N4614 – 1N4627/1N4099 – 1N4135

Nominal

Zener

Voltage

VZ

@

IZT

(Note1)

Zener

Test

Current

IZT

Maximum

Zener

Impedance

ZZT

Maximum Reverse

Leakage Current

IR @ VR

Maximum

Noise Density

ND @ IZT

(Fig.1)

Maximum

Zener

Current

IZM

(Note2)

Maximum

TEMP. Coeff. Of

Zener Voltage

αvz

Part Number

V

μA

Ω

μA

V

μV/Sq(HZ)

mA

%/° C

1N4120

30

250

200

0.01

22.80

40

13

0.095

1N4121

33

250

200

0.01

25.08

40

12

0.095

1N4122

36

250

200

0.01

27.38

40

11

0.095

1N4123

39

250

200

0.01

29.65

40

9.8

0.095

1N4124

43

250

0.01

32.65

40

8.9

0.095

1N4125

47

250

0.01

35.75

40

8.1

0.095

1N4126

51

250

300

0.01

38.76

40

7.5

0.100

1N4127

56

250

300

0.01

42.60

40

6.7

0.100

1N4128

60

250

400

0.01

45.60

40

6.4

0.100

1N4129

62

250

500

0.01

47.10

40

6.1

0.100

1N4130

68

250

700

0.01

51.68

40

5.6

0.100

1N4131

75

250

700

0.01

57.00

40

5.1

0.100

1N4132

82

250

800

0.01

62.32

40

4.6

0.100

1N4133

87

250

1000

0.01

66.12

40

4.4

0.100

1N4134

91

250

1200

0.01

69.16

40

4.2

0.100

1N4135

100

250

1500

0.01

76.00

40

3.8

0.100

Note 1: The part numbers shown above have a Zener voltage tolerance of ±5% of the

nominal Zener voltage. VZ is measured with the device junction in thermal equilibrium

at an ambient temperature of 25° C ± 3° C.

Note 2: Based upon 400mW maximum power dissipation at 25° C lead temperature, allowance

has been made for the higher voltage associated with operation at higher currents.

Numéro de pièce similaire - 1N4135

Fabricant	No de pièce	Fiches technique	Description
Compensated Deuices Inc...	1N4135	98Kb / 2P	LOW CURRENT OPERATION AT 250 uA
Microsemi Corporation	1N4135	86Kb / 2P	SILICON 500mA LOW NOISE ZENER DIODES
	1N4135	109Kb / 2P	SILICON 400mA LOW NOISE ZENER DIODES
	1N4135	111Kb / 2P	LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
Jinan Gude Electronic D...	1N4135	181Kb / 2P	500mW LOW NOISE SILION ZENER DIODES

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Fabricant	No de pièce	Fiches technique	Description
Jinan Gude Electronic D...	1N4099	181Kb / 2P	500mW LOW NOISE SILION ZENER DIODES
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Jinan Gude Electronic D...	1N746	199Kb / 2P	500mW SILICON ZENER DIODES
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