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STD7NM50N Fiches technique(PDF) 5 Page - STMicroelectronics |
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STD7NM50N Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 17 page STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N Electrical characteristics 5/17 Table 6. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 250V, ID = 2.5A, RG = 4.7Ω, VGS = 10V (see Figure 15) 7 5 40 9 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 5 20 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 5A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =5A, di/dt =100A/µs, VDD=100V, Tj=25°C (see Figure 17) 250 2 13 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =5A, di/dt =100A/µs, VDD=100V, Tj=150°C (see Figure 17) 330 2 13 ns µC A |
Numéro de pièce similaire - STD7NM50N |
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Description similaire - STD7NM50N |
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