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STQ1NE10L-AP Fiches technique(PDF) 3 Page - STMicroelectronics |
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STQ1NE10L-AP Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 13 page Obsolete Product(s) - Obsolete Product(s) STQ1NE10L Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate-source voltage ± 16 V ID Drain current (continuous) at TC = 25°C 1 A ID Drain current (continuous) at TC=100°C 0.6 A IDG Drain gate current (continuous) ± 50 mA IGS Gate source current (continuous) ± 50 mA IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 4 A PTOT (2) 2. Related to Rthj -l Total dissipation at TC = 25°C 3 W Derating factor 0.025 W/°C dv/dt(3) 3. ISD ≤1A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX Peak diode recovery voltage slope 6 V/ns EAS (4) 4. Starting TJ = 25 oC, I D = 1A, VDD = 50V Single pulse avalanche energy 400 mJ Tstg Storage temperature -55 to 150 °C TJ Operating junction temperature Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case max 40 °C/W RthJA Thermal resistance junction-ambient max 125 °C/W Tl Maximum lead temperature for soldering purpose 260 °C |
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