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STQ1NE10L-AP Fiches technique(PDF) 1 Page - STMicroelectronics |
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STQ1NE10L-AP Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 13 page January 2007 Rev 5 1/13 13 STQ1NE10L N-channel 100V - 0.3 Ω - 1A - TO-92 STripFET™ Power MOSFET General features ■ Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID STQ1NE10L 100V <0.4 Ω 1A TO-92 (Ammopack) TO-92 www.st.com Order codes Part number Marking Package Packaging STQ1NE10L Q1NE10L TO-92 Tube STQ1NE10L-AP Q1NE10L TO-92 Ammopak Obsolete Product(s) - Obsolete Product(s) |
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