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STQ1NC45R-AP Fiches technique(PDF) 5 Page - STMicroelectronics |
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STQ1NC45R-AP Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 15 page STD2NC45-1 - STQ1NC45R-AP Electrical characteristics 5/15 Table 6. Switching times Symbol Parameter Test condictions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 225V, ID = 0.5A RG =4.7Ω VGS = 10V (see Figure 17) 6.7 4 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 360V, ID = 1.5A, RG =4.7Ω, VGS = 10V (see Figure 17) 8.5 12 18 ns ns ns Table 7. Source drain diode Symbol Parameter Test condictions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 1.5 6.0 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 1.5A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 1.5A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see Figure 22) 225 530 4.7 ns µC A |
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