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STQ1NC45R-AP Fiches technique(PDF) 4 Page - STMicroelectronics |
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STQ1NC45R-AP Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STD2NC45-1 - STQ1NC45R-AP 4/15 2 Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test condictions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS = 0 450 V IDSS Zero gate voltage Drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125°C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 30V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2.3 3 3.7 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 0.5A 4.1 4.5 Ω Table 5. Dynamic Symbol Parameter Test condictions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 % Forward transconductance VDS > ID(on) x RDS(on)max, ID = 0.5A 1.1 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 160 27.5 4.7 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 360V, ID = 1.5A, VGS = 10V, RG =4.7Ω (see Figure 18) 7 1.3 3.2 10 nC nC nC |
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