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STQ1NC45R-AP Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STQ1NC45R-AP
Description  N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1NC45R-AP Fiches technique(HTML) 3 Page - STMicroelectronics

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STD2NC45-1 - STQ1NC45R-AP
Electrical ratings
3/15
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
IPAK
TO-92
VDS
Drain-source voltage (VGS = 0)
450
V
VGS
Gate- source voltage
±30
V
ID
Drain current (continuous) at TC = 25°C
1.5
0.5
A
ID
Drain current (continuous) at TC = 100°C
0.95
0.315
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
6
2
A
PTOT
Total dissipation at TC = 25°C
30
3.1
W
Derating factor
0.24
0.025
W/°C
dv/dt (2)
2.
ISD < 0.5A, di/dt < 100 A/µs, VDD =80% V(BR)DSS
Peak diode recovery voltage slope
3
V/ns
Tstg
Storage temperature
–65 to 150
°C
Tj
Max. operating junction temperature
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
IPAK
TO-92
Rthj-case
Thermal resistance junction-case max
4.1
--
°C/W
Rthj-amb
Thermal resistance junction-ambient max
100
120
°C/W
Rthj-lead
Thermal resistance junction-lead max
--
40
°C/W
Tl
Maximum lead temperature for soldering
purpose
275
260
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
1.5
A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID=IAS, VDD=50V)
25
mJ


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