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TYNX16RG Fiches technique(PDF) 2 Page - STMicroelectronics |
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TYNX16RG Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 9 page Characteristics TN1625, TYN616, TYN816 2/9 1 Characteristics S = copper surface under tab Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180 °Conduction angle) Tc = 110 °C 16 A IT(AV) Average on-state current (180 °Conduction angle) Tc = 110 °C 10 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25 °C 200 A tp = 10 ms 190 I2tI2t Value for fusing tp = 10 ms Tj = 25 °C 180 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A PG(AV) Average gate power dissipation Tj = 125 °C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage 5 V Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test Conditions Value Unit IGT VD = 12 V RL = 33 Ω MIN. 2 mA MAX. 25 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125 °C MIN. 0.2 V IH IT = 500 mA Gate open MAX. 40 mA IL IG = 1.2 x IGT MAX. 60 mA dV/dt VD = 67 % VDRM Gate open Tj = 125 °C MIN. 500 V/µs VTM ITM = 32 A tp = 380 µs Tj = 25 °C MAX. 1.6 V Vt0 Threshold voltage Tj = 125 °C MAX. 0.77 V Rd Dynamic resistance Tj = 125 °C MAX. 23 m Ω IDRM IRRM VDRM = VRRM Tj = 25 °C MAX. 5µA Tj = 125 °C 2 mA Table 4. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) 1.1 °C/W Rth(j-a) Junction to ambient (DC) S = 01 cm2 D2PAK 45 °C/W TO-220AB 60 |
Numéro de pièce similaire - TYNX16RG |
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Description similaire - TYNX16RG |
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