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TYNX16RG Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce TYNX16RG
Description  16 A standard SCRs
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TYNX16RG Fiches technique(HTML) 2 Page - STMicroelectronics

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Characteristics
TN1625, TYN616, TYN816
2/9
1
Characteristics
S = copper surface under tab
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (180 °Conduction angle)
Tc = 110 °C
16
A
IT(AV)
Average on-state current (180 °Conduction angle)
Tc = 110 °C
10
A
ITSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25 °C
200
A
tp = 10 ms
190
I2tI2t Value for fusing
tp = 10 ms
Tj = 25 °C
180
A2S
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 60 Hz
Tj = 125 °C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
4
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
VRGM
Maximum peak reverse gate voltage
5
V
Table 3.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test Conditions
Value
Unit
IGT
VD = 12 V
RL = 33 Ω
MIN.
2
mA
MAX.
25
VGT
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 125 °C
MIN.
0.2
V
IH
IT = 500 mA Gate open
MAX.
40
mA
IL
IG = 1.2 x IGT
MAX.
60
mA
dV/dt
VD = 67 % VDRM Gate open
Tj = 125 °C
MIN.
500
V/µs
VTM
ITM = 32 A tp = 380 µs
Tj = 25 °C
MAX.
1.6
V
Vt0
Threshold voltage
Tj = 125 °C
MAX.
0.77
V
Rd
Dynamic resistance
Tj = 125 °C
MAX.
23
m
Ω
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
MAX.
5µA
Tj = 125 °C
2
mA
Table 4.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (DC)
1.1
°C/W
Rth(j-a)
Junction to ambient (DC)
S = 01 cm2
D2PAK
45
°C/W
TO-220AB
60


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