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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SI5476DU Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI5476DU Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  Si5476DU Vishay Siliconix New Product www.vishay.com 2 Document Number: 73663 S–60219—Rev. A, 20-Feb-06 SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 1 mA 60 V VDS Temperature Coefficient DVDS/TJ ID = 250 mA 55 mV/ _C VGS(th) Temperature Coefficient DVGS(th)/TJ ID = 250 mA – 6.3 mV/ _C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = " 20 V "100 ns Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 55 _C 10 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 25 A Drain Source On State Resistancea rDS( ) VGS = 10 V, ID = 4.6 A 0.028 0.034 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 4.2 A 0.033 0.041 W Forward Transconductancea gfs VDS = 15 V, ID = 4.6 A 20 S Dynamicb Input Capacitance Ciss 1100 Output Capacitance Coss VDS = 30 V, VGS = 0 V, f = 1 MHz 90 pF Reverse Transfer Capacitance Crss 55 p Total Gate Charge Q VDS = 30 V, VGS = 10 V, ID = 4.6 A 21 32 Total Gate Charge Qg 10.5 16 nC Gate-Source Charge Qgs VDS = 30 V, VGS = 4.5 V, ID= 4.6 A 3.5 nC Gate-Drain Charge Qgd 4.2 Gate Resistance Rg f = 1 MHz 3.3 W Turn-On Delay Time td(on) 20 30 Rise Time tr VDD = 30 V, RL = 5.4 W 150 225 Turn-Off Delay Time td(off) VDD = 30 V, RL = 5.4 W ID ^ 5.6 A, VGEN = 4.5 V, Rg = 1 W 20 30 Fall Time tf g 60 90 ns Turn-On Delay Time td(on) 10 15 ns Rise Time tr VDD = 30 V, RL = 5.4 W 15 25 Turn-Off Delay Time td(off) VDD = 30 V, RL = 5.4 W ID ^ 5.6 A, VGEN = 10 V, Rg = 1 W 25 40 Fall Time tf g 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 _C 12 A Pulse Diode Forward Current ISM 25 A Body Diode Voltage VSD IS = 5.5 A, VGS = 0 V 0.85 1.2 V Body Diode Reverse Recovery Time trr 25 50 ns Body Diode Reverse Recovery Charge Qrr IF =55A di/dt = 100 A/msTJ =25 _C 25 50 nC Reverse Recovery Fall Time ta IF = 5.5 A, di/dt = 100 A/ms, TJ = 25 _C 19 ns Reverse Recovery Rise Time tb 6 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
Numéro de pièce similaire - SI5476DU |
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Description similaire - SI5476DU |
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