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2N4401 Fiches technique(PDF) 2 Page - List of Unclassifed Manufacturers

No de pièce 2N4401
Description  General Purpose Switching Transistors
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Fabricant  ETC2 [List of Unclassifed Manufacturers]
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2N4401 Fiches technique(HTML) 2 Page - List of Unclassifed Manufacturers

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2N4401
& 2N4403
General Purpose Switching Transistors
Absolute Maximum Ratings
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameters
Symbol
2N4401
2N4403
Unit
Collector Emitter Voltage
VCEO
40
40
V
Collector Base Voltage
VCBO
60
Emitter Base Voltage
VEBO
6
5
Collector Current Continuous
IC
600
mA
Power Dissipation at Ta = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Power Dissipation at TC = 25°C
Derate above 25°C
1.5
12
W
W/°C
Operating and Storage Junction
Temperature Range
Tj, Tstg
-55 to +150
°C
Thermal Resistance
Junction to Case
Rth(j-c)
83.3
°C/W
Junction to Ambient
Rth(j-a)
200
Parameters
Symbol
Test Condition
2N4401
2N4403
Unit
Collector Emitter Voltage
BVCEO*
IC = 1mA, IB = 0
>40
>40
V
Collector Base Voltage
BVCBO
IC = 100
µA, IE = 0
>60
Emitter Base Voltage
BVEBO
IE = 100µA, IC = 0
>6
>5
Base Cut off Current
IBEV
VCE = 35V, VEB = 0.4V
<0.1
<0.1
µA
Collector Cut off Current
ICEX
VCE = 35V, VEB = 0.4V
Collector Emitter Saturation Voltage
VCE(Sat)*
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
<0.4
<0.75
<0.4
<0.75
V
Base Emitter Saturation Voltage
VBE(Sat) *
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
0.75 - 0.95
<1.2
0.75 - 0.95
<1.3
DC Current Gain
hFE
IC = 0.1mA, VCE = 1V
IC = 1mA, VCE = 1V
IC = 10mA, VCE = 1V
IC = 150mA, VCE = 1V*
IC = 150mA, VCE = 2V*
IC = 500mA, VCE = 2V*
>20
>40
>80
100 - 300
-
>40
>30
>60
>100
-
100 - 300
>20
-
Dynamic Characteristics
Small Signal Current Gain
hfe
IC = 1mA, VCE = 10V, f = 1kHz
40 - 500
60 - 500
-
Input Impedance
hie
IC = 1mA, VCE = 10V, f = 1kHz
1.0 - 15
1.5 - 15
k
*Pulse Test : Pulse Width:
≤300µs, Duty ≤2.0%
Page 2
31/05/05 V1.0


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