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STP20NM50FP Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STP20NM50FP
Description  N-channel 500V - 0.20廓 - 20A - TO220/FP-D2PAK-I2PAK MDmesh??Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP20NM50FP Fiches technique(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
500
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±30V
±
100
µA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
34
5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 10 A
0.20
0.25
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS > ID(ON) x RDS(ON)max,
ID = 10A
10
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz,
VGS=0
1480
285
34
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
130
pF
Rg
Gate input resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=400V, ID = 20A
VGS =10V
(see Figure 15)
40
13
19
56
nC
nC
nC


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