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SI4559ADY Fiches technique(PDF) 9 Page - Vishay Siliconix |
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SI4559ADY Fiches technique(HTML) 9 Page - Vishay Siliconix |
9 / 12 page Si4559ADY Vishay Siliconix New Product Document Number: 73624 S–52667—Rev. A, 02-Jan-06 www.vishay.com 9 TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) PCHANNEL 0 30 10 20 Single Pulse Power Time (sec) 40 1 600 10 10–1 10–3 50 –0.4 –0.2 0.0 0.2 0.4 0.6 –50 –25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ – Temperature (_C) Safe Operating Area, Junction-to-Case 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 _C Single Pulse 100 10–2 P(t) = 10 dc ID(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 IDM Limited Limited by rDS(on) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 2468 10 TJ = 25_C ID = 3.1 A 20 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) TJ = 150_C VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified |
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