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STQ2HNK60ZR-AP Fiches technique(PDF) 5 Page - STMicroelectronics |
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STQ2HNK60ZR-AP Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 16 page STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP Electrical characteristics 5/16 Table 6. Switching times Symbol Parameter Test Condictions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD=300V, ID=1.0A, RG=4.7Ω, VGS=10V (see Figure 17) 10 30 ns ns td(off) tf Turn-off Delay Time Fall Time VDD=300V, ID=1.0A, RG=4.7Ω, VGS=10V (see Figure 17) 23 50 ns ns Table 7. Source drain diode Symbol Parameter Test Condictions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain Current Source-drain Current (pulsed) 2.0 8.0 A A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on Voltage ISD=2.0A, VGS=0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=2.0A, di/dt = 100A/µs, VDD=20 V, Tj=25°C 178 445 5 ns nC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=2.0A, di/dt = 100A/µs, VDD=20 V, Tj=150°C 200 500 5 ns nC A |
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