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STQ2HNK60ZR-AP Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STQ2HNK60ZR-AP
Description  N-channel 600V - 4.4廓 - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ2HNK60ZR-AP Fiches technique(HTML) 3 Page - STMicroelectronics

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STD2HNK60Z/-1 - STF2HNK60Z - STQ2HNK60ZR-AP
Electrical ratings
3/16
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
IPAK/DPAK TO-220FP TO-92
VDS
Drain-Source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20kΩ)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
2.0
2.0
0.5
A
ID
Drain Current (continuous) at TC=100°C
1.26
1.26
0.32
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain Current (pulsed)
8
8
2
A
PTOT
Total Dissipation at TC = 25°C
45
20
3
W
Derating Factor
0.36
0.16
0.025
W/°C
VESD(G-S) Gate Source ESD (HBM-C=100pF, R=1.5kΩ)
2000
V
VISO
Insulation withstand voltage (DC)
--
2500
--
V
dv/dt(2)
2.
ISD ≤2A, di/dt ≤200A/µs, VDD =80%V(BR)DSS
Peak Diode Recovery voltage slope
4.5
V/ns
TJ
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
Tl
Maximum lead temperature for soldering
purpose
300
260
°C
Table 2.
Thermal data
IPAK/DPAK TO-220FP TO-92
Rthj-case
Thermal resistance junction-case Max
2.77
6.25
--
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
100
62.5
120
°C/W
Rthj-lead
Thermal resistance junction-lead Max
--
--
40
°C/W
Table 3.
Avalanche data
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
2A
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID=IAR, VDD=50V)
120
mJ


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