SI1012R datasheet(4/6 Pages) VISHAY

No de pièce	SI1012R

Description	N-Channel 1.8-V (G-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Si1012R/X

Vishay Siliconix

www.vishay.com

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Document Number: 71166

S-50366—Rev. B, 28-Feb-05

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

1

2

3

4

5

0123456

ID = 350 mA

1000

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

VGS − Gate-to-Source Voltage (V)

ID = 200 mA

TJ = 125_C

TJ = 25_C

TJ = −55_C

10

100

−0.3

−0.2

−0.1

−0.0

0.1

0.2

0.3

−50

−25

0

25

50

75

100

125

ID = 0.25 mA

Threshold Voltage Variance vs. Temperature

TJ − Temperature (_C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

−50

−25

0

25

50

75

100

125

IGSS vs. Temperature

TJ − Temperature (_C)

VGS = 4.5 V

0

1

2

3

4

5

6

7

−50

−25

0

25

50

75

100

125

BVGSS vs. Temperature

TJ − Temperature (_C)

Numéro de pièce similaire - SI1012R

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI1012R	50Kb / 5P	N-Channel 1.8-V (G-S) MOSFET Rev. A, 25-Oct-00
	SI1012R	108Kb / 6P	N-Channel 1.8-V (G-S) MOSFET Rev. C, 07-Jul-08
	SI1012R	204Kb / 10P	N-Channel 1.8 V (G-S) MOSFET Rev. D, 25-Oct-10
	SI1012R	235Kb / 11P	N-Channel 1.8 V (G-S) MOSFET Rev. E, 15-Apr-13
	SI1012R	172Kb / 8P	N-Channel 1.8 V (G-S) MOSFET Rev. E, 15-Apr-13

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Description similaire - SI1012R

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI1012R	50Kb / 5P	N-Channel 1.8-V (G-S) MOSFET Rev. A, 25-Oct-00
Vishay Siliconix	SI1012R	172Kb / 8P	N-Channel 1.8 V (G-S) MOSFET Rev. E, 15-Apr-13
Leshan Radio Company	LSI1012XT1G	324Kb / 6P	N-Channel 1.8-V (G-S) MOSFET
	LSI1012LT1G	457Kb / 6P	N-Channel 1.8-V (G-S) MOSFET
	LSI1012N3T5G	398Kb / 6P	N-Channel 1.8-V (G-S) MOSFET
	LSI1012XT1G	341Kb / 6P	N-Channel 1.8-V (G-S) MOSFET
Vishay Siliconix	SI1012R	204Kb / 10P	N-Channel 1.8 V (G-S) MOSFET Rev. D, 25-Oct-10
Leshan Radio Company	LSI1012LT1G	442Kb / 5P	N-Channel 1.8-V (G-S) MOSFET
Leshan Radio Company	LSI1012N3T5G	323Kb / 5P	N-Channel 1.8-V (G-S) MOSFET
First Silicon Co., Ltd	FTK1012S	353Kb / 5P	N-Channel 1.8-V (G-S) MOSFET

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SI1012R Fiches technique(PDF) 4 Page - Vishay Siliconix

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