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SI2303BDS Fiches technique(PDF) 5 Page - Sumida Corporation |
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SI2303BDS Fiches technique(HTML) 5 Page - Sumida Corporation |
5 / 6 page Document Number: 72065 S-80642-Rev. C, 24-Mar-08 www.vishay.com 5 Vishay Siliconix Si2303BDS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72065. Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) 2 1 0.1 0.01 10-4 10-3 10-2 10-1 1 10 600 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 62.5 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 100 |
Numéro de pièce similaire - SI2303BDS |
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Description similaire - SI2303BDS |
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