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SI2303BDS Fiches technique(PDF) 1 Page - Sumida Corporation |
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SI2303BDS Fiches technique(HTML) 1 Page - Sumida Corporation |
1 / 6 page Vishay Siliconix Si2303BDS Document Number: 72065 S-80642-Rev. C, 24-Mar-08 www.vishay.com 1 P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free Option Available PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) b - 30 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 G TO-236 (SOT-23) S D Top View 2 3 1 Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free) Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t ≤ 5 s. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) b TA = 25 °C ID - 1.64 - 1.49 A TA = 70 °C - 1.31 - 1.2 Pulsed Drain Currenta IDM - 10 Continuous Source Current (Diode Conduction)b IS - 0.75 - 0.6 Power Dissipationb TA = 25 °C PD 0.9 0.7 W TA = 70 °C 0.57 0.45 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb RthJA 120 145 °C/W Maximum Junction-to-Ambientc 140 175 Available Pb-free RoHS* COMPLIANT |
Numéro de pièce similaire - SI2303BDS_08 |
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Description similaire - SI2303BDS_08 |
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