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MMBT3904G Fiches technique(PDF) 1 Page - Zowie Technology Corporation

No de pièce MMBT3904G
Description  General Purpose Transistor
Download  6 Pages
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Fabricant  ZOWIE [Zowie Technology Corporation]
Site Internet  http://www.zowie.com.tw
Logo ZOWIE - Zowie Technology Corporation

MMBT3904G Fiches technique(HTML) 1 Page - Zowie Technology Corporation

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Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
Lead free product
MMBT3904G
1
2
1
2
3
3
SOT-23
Rating
Symbol
Value
Unit
Characteristic
Symbol
Min.
Max.
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current-Continuous
IC
200
mAdc
Characteristic
Symbol
Max.
Unit
Total Device Dissipation FR-5 Board
(1) TA=25
o
C
Derate above 25
o
C
PD
225
1.8
mW
mW /
oC
Total Device Dissipation Alumina Substrate,
(2) TA=25
o
C
Derate above 25
o
C
PD
V(BR)CBO
300
2.4
60
-
mW
mW /
oC
Thermal Resistance Junction to Ambient
556
oC / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
V(BR)CEO
40
-
Vdc
Vdc
OFF CHARACTERISTICS
R JA
Thermal Resistance Junction to Ambient
417
oC / W
R JA
Junction and Storage Temperature
Collector-Base Breakdowe Voltage
( IC=10 uAdc, IE=0 )
V(BR)EBO
6.0
-
Vdc
Emitter-Base Breakdowe Voltage
( IE=10 uAdc, IC=0 )
Collector-Emitter Breakdowe Voltage
(3)
( IC=1.0mAdc, IB=0 )
IBL
-
50
nAdc
Base Cutoff Current
( VCE=30 Vdc, VEB=3.0 Vdc )
ICEX
-
50
nAdc
Collector Cutoff Current
( VCE=30 Vdc, VEB=3.0 Vdc )
MMBT3904=1AM
-55 to +150
oC
TJ,TSTG
Zowie Technology Corporation
REV. 0
EMITTER
BASE
COLLECTOR


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