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STQ1NK60ZR-AP Fiches technique(PDF) 4 Page - Microsemi Corporation

No de pièce STQ1NK60ZR-AP
Description  N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
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Fabricant  MICROSEMI [Microsemi Corporation]
Site Internet  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

STQ1NK60ZR-AP Fiches technique(HTML) 4 Page - Microsemi Corporation

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Electrical characteristics
STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z
4/14
Rev 7
Table 6.
Switching times
Symbol
Parameter
Test Condictions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD=300 V, ID= 0.4A,
RG=4.7Ω, VGS=10V
(see Figure 19)
5.5
5
13
28
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test Condictions
Min
Typ.
Max
Unit
ISD
Source-drain Current
0.8
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain Current (pulsed)
2.4
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on Voltage
ISD=0.8A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=0.8A,
di/dt = 100A/µs,
VDD=20V, Tj=25°C
135
216
3.2
ns
nC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=0.8A,
di/dt = 100A/µs,
VDD=20V, Tj=150°C
140
224
3.2
ns
nC
A
Table 8.
Gate-source zener diode
Symbol
Parameter
Test Condictions
Min.
Typ.
Max.
Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source Braekdown
Voltage
Igs=±1mA (Open Drain)
30
V


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