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STQ1NK60ZR Fiches technique(PDF) 2 Page - Microsemi Corporation |
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STQ1NK60ZR Fiches technique(HTML) 2 Page - Microsemi Corporation |
2 / 14 page Electrical ratings STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z 2/14 Rev 7 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit IPAK TO-92 SOT-223 VDS Drain-Source Voltage (VGS = 0) 600 V VDGR Drain-Gate Voltage (RGS = 20KΩ)600 V VGS Gate-Source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 0.8 0.3 0.3 A ID Drain Current (continuous) at TC=100°C 0.5 0.189 A IDM (1) 1. Pulse width limited by safe operating area Drain Current (pulsed) 3.2 1.2 A PTOT Total Dissipation at TC = 25°C 25 3 3.3 W Derating Factor 0.24 0.25 0.26 W/°C VESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5K Ω) 800 V dv/dt(2) 2. ISD ≤0.3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS Peak Diode Recovery voltage slope 4.5 V/ns TJ Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C Table 2. Thermal resistance Symbol Parameter Value Unit IPAK TO-92 SOT-223 Rthj-case Thermal resistance junction-case Max 5 -- -- °C/W Rthj-a Thermal resistance junction-ambient Max 100 120 37.87(1) 1. When mounted on 1 inch² FR-4 board, 2 Oz Cu °C/W Rthj-lead Thermal resistance junction-lead Max -- 40 -- °C/W Tl Maximum lead temperature for soldering purpose 275 260 °C Table 3. Avalanche data Symbol Parameter Value Unit IAR Avalanche Curent, Repetitive or Noy-Repetitive (pulse width limited by Tj Max) 0.8 A EAS Single pulse avalanche Energy (starting Tj=25°C, Id=Iar, Vdd=50V) 60 mJ |
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