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STQ1NK60ZR Fiches technique(PDF) 4 Page - Microsemi Corporation |
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STQ1NK60ZR Fiches technique(HTML) 4 Page - Microsemi Corporation |
4 / 14 page Electrical characteristics STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z 4/14 Rev 7 Table 6. Switching times Symbol Parameter Test Condictions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD=300 V, ID= 0.4A, RG=4.7Ω, VGS=10V (see Figure 19) 5.5 5 13 28 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test Condictions Min Typ. Max Unit ISD Source-drain Current 0.8 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain Current (pulsed) 2.4 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on Voltage ISD=0.8A, VGS=0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=0.8A, di/dt = 100A/µs, VDD=20V, Tj=25°C 135 216 3.2 ns nC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=0.8A, di/dt = 100A/µs, VDD=20V, Tj=150°C 140 224 3.2 ns nC A Table 8. Gate-source zener diode Symbol Parameter Test Condictions Min. Typ. Max. Unit BVGSO (1) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Gate-source Braekdown Voltage Igs=±1mA (Open Drain) 30 V |
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