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TPCS8204 Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce TPCS8204
Description  Lithium Ion Battery Applications Field Effect Transistor Silicon N Channel MOS Type
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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TPCS8204
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8204
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 15 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
20
V
Gate-source voltage
VGSS
±12
V
DC
(Note 1)
ID
6
Drain current
Pulse
(Note 1)
IDP
24
A
Single-device
operation (Note 3a)
PD (1)
1.1
Drain power
dissipation
(t
= 10 s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
PD (2)
0.75
W
Single-device
operation (Note 3a)
PD (1)
0.6
Drain power
dissipation
(t
= 10 s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
PD (2)
0.35
W
Single pulse avalanche energy
(Note 4)
EAS
46.8
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.075
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4


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