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P-TO263-3-2 Fiches technique(PDF) 1 Page - Infineon Technologies AG |
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P-TO263-3-2 Fiches technique(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page 2003-10-06 Page 1 SPP03N60S5 SPB03N60S5 Final data Cool MOS™ Power Transistor VDS 600 V RDS(on) 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 P-TO263-3-2 Type Package Ordering Code SPP03N60S5 P-TO220-3-1 Q67040-S4184 SPB03N60S5 P-TO263-3-2 Q67040-S4197 Marking 03N60S5 03N60S5 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 3.2 2 A Pulsed drain current, tp limited by Tjmax ID puls 5.7 Avalanche energy, single pulse ID = 2.4 A, VDD = 50 V EAS 100 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID = 3.2 A, VDD = 50 V EAR 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 3.2 A Gate source voltage VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 38 W Operating and storage temperature Tj , Tstg -55... +150 °C |
Numéro de pièce similaire - P-TO263-3-2 |
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Description similaire - P-TO263-3-2 |
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