L6571BD datasheet(3/7 Pages) STMICROELECTRONICS

No de pièce	L6571BD

Description	HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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OSCILLATOR FREQUENCY

The frequency of the internal oscillator can be

programmed using external resistor and capacitor.

The nominal oscillator frequency can be calcu-

lated using the following equation:

fOSC

=

1

2

⋅ RF ⋅ CF

⋅ In 2

=

1

1.3863

⋅RF ⋅ CF

where RF and CF are the external resistor and ca-

pacitor

ELECTRICAL CHARACTERISTICS (VS =12V; VBOOT -VOUT =12V; Tj =25

°C; unlessotherwise specified.)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

VSUVP

1VS Turn On Threshold

8.3

9

9.7

V

VSUVN

VS Turn Off Threshold

7.3

8

8.7

V

VSUVH

VS Hysteresis

0.7

1

1.3

V

VCL

VS Clamping Voltage

IS = 5mA

14.6

15.6

16.6

V

ISU

Start Up Current

VS <VSUVN

150

250

µA

Iq

Quiescent Current

VS >VSUVP

500

700

µA

IBOOTLK

8

Leakage Current BOOT pin vs

GND

VBOOT = 580V

5

µA

IOUTLK

6

Leakage Current OUT pin vs GND

VOUT = 562V

5

µA

IHVG SO

7

High Side Driver Source Current

VHVG = 6V

110

175

mA

IHVG SI

High Side Driver Sink Current

VHVG = 6V

190

275

mA

ILVG SO

5

Low Side Driver Source Current

VLVG = 6V

110

175

mA

ILVG SI

Low Side Driver Sink Current

VLVG = 6V

190

275

mA

VRFON

2

RF High Level Output Voltage

IRF = 1mA

VS -0.05

VS -0.2

V

VRF OFF

RF Low Level Output Voltage

IRF = -1mA

50

200

mV

VCFU

3

CF Upper Threshold

7.7

7.95

8.2

V

VCFL

CF Lower Threshold

3.80

4.05

4.3

V

td

Internal Dead Time

L6571A

L6571B

0.85

0.50

1.25

0.72

1.65

0.94

µs

DC

Duty Cycle, Ratio Between

Dead Time + Conduction Time

of High Side and Low Side

Drivers

0.45

0.5

0.55

IAVE

1

Average Current from Vs

No Load, fs = 60KHz

1.2

1.5

mA

fout

6

Oscillation Frequency

RT = 12k

CT = 1nF

57

60

63

kHz

T1

TC

VS

VCF

LVG

D96IN434

V

SUVP

Figure 2: WAVEFORMS

L6571A - L6571B

3/7

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