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LM4051 Fiches technique(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No de pièce LM4051
Description  Precision Micropower Shunt Voltage Reference
Download  14 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4051 Fiches technique(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
20 mA
Forward Current
10 mA
Maximum Output Voltage
(LM4051-ADJ)
15V
Power Dissipation (T
A = 25˚C) (Note 2)
M3 Package
280 mW
Storage Temperature
−65˚C to +150˚C
Lead Temperature
M3 Packages
Vapor phase (60 seconds)
+215˚C
Infrared (15 seconds)
+220˚C
ESD Susceptibility
Human Body Model (Note 3)
2 kV
Machine Model (Note 3)
200V
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
Operating Ratings (Note 2)
Temperature Range
(T
min
≤ T
A
≤ T
max)
Industrial Temperature Range
−40˚C
≤ T
A
≤ +85˚C
Extended Temperature Range
−40˚C
≤ T
A
≤ +125˚C
Reverse Current
LM4051-1.2
60 µA to 12 mA
LM4051-ADJ
60 µA to 12 mA
Output Voltage Range
LM4051-ADJ
1.24V to 10V
LM4051-1.2
Electrical Characteristics
Boldface limits apply for T
A =TJ =TMIN to TMAX; all other limits TA =TJ = 25˚C. The grades A, B and C designate initial Re-
verse Breakdown Voltage tolerances of ±0.1%, ±0.2% and ±0.5% respectively.
Symbol
Parameter
Conditions
Typical
(Note 4)
LM4051AIM3
LM4051AEM3
(Limits)
(Note 5)
LM4051BIM3
LM4051BEM3
(Limits)
(Note 5)
LM4051CIM3
LM4051CEM3
(Limts)
(Note 5)
Units
(Limit)
VR
Reverse Breakdown Voltage
IR = 100 µA
1.225
V
Reverse Breakdown Voltage
Tolerance (Note 6)
IR = 100 µA
±1.2
±2.4
±6
mV (max)
Industrial Temp. Range
±5.2
±6.4
±10.1
mV (max)
Extended Temp. Range
±7.4
±8.6
±12.2
mV (max)
IRMIN
Minimum Operating Current
39
µA
60
60
60
µA (max)
65
65
65
µA (max)
∆VR/∆T
Average Reverse Breakdown
Voltage Temperature
Coefficient (Note 6)
IR=10mA
±20
ppm/˚C
IR =1mA
±15
ppm/˚C
IR = 100 µA
∆T = −40˚C to 125˚C
±15
±50
±50
±50
ppm/˚C (max)
∆VR/∆IR
Reverse Breakdown Voltage
Change with Operating
Current Change
IRMIN ≤ IR ≤ 1 mA
0.3
mV
1.1
1.1
1.1
mV (max)
1.5
1.5
1.5
mV (max)
1mA
≤ IR ≤ 12 mA
1.8
mV
6.0
6.0
6.0
mV (max)
8.0
8.0
8.0
mV (max)
ZR
Reverse Dynamic Impedance
IR = 1 mA, f = 120 Hz
0.5
eN
Wideband Noise
IR = 100 µA
20
µVrms
10 Hz
≤ f ≤ 10 kHz
∆VR
Reverse Breakdown Voltage
Long Term Stability
(Note 9)
t = 1000 hrs
T = 25˚C ±0.1˚C
IR = 100 µA
120
ppm
VHYST
Thermal Hysteresis
(Note 10)
∆T = −40˚C to 125˚C
0.36
mV/V
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