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LM4040 Fiches technique(PDF) 16 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No de pièce LM4040
Description  Precision Micropower Shunt Voltage Reference
Download  31 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4040 Fiches technique(HTML) 16 Page - National Semiconductor (TI)

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LM4040-5.0
Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for T
A =TJ =TMIN to TMAX; all other limits TA =TJ = 25˚C. The grades C and D designate initial Re-
verse Breakdown Voltage tolerances of ±0.5% and ±1.0%, respectively.
Symbol
Parameter
Conditions
Typical
(Note 4)
LM4040CIM3
LM4040CIZ
LM4040CIM7
Limits
(Note 5)
LM4040DIM3
LM4040BIZ
LM4040DIM7
Limits
(Note 5)
Units
(Limit)
V
R
Reverse Breakdown Voltage
I
R = 100 µA
5.000
V
Reverse Breakdown Voltage
Tolerance (Note 6)
I
R = 100 µA
±25
±50
mV (max)
±58
±99
mV (max)
I
RMIN
Minimum Operating Current
54
µA
74
79
µA (max)
80
85
µA (max)
∆V
R/
∆T Average Reverse Breakdown
Voltage Temperature
Coefficient (Note 6)
I
R =10 mA
±30
ppm/˚C
I
R =1 mA
±20
±100
±150
ppm/˚C (max)
I
R = 100 µA
±20
ppm/˚C
∆V
R/
∆I
R
Reverse Breakdown Voltage
Change with Operating
Current Change (Note 7)
I
RMIN
≤ I
R
≤ 1 mA
0.5
mV
1.0
1.3
mV (max)
1.4
1.8
mV (max)
1mA
≤ I
R
≤ 15 mA
3.5
mV
8.0
10.0
mV (max)
12.0
15.0
mV (max)
Z
R
Reverse Dynamic
Impedance
I
R = 1 mA, f = 120 Hz,
0.5
I
AC = 0.1 IR
1.1
1.5
Ω (max)
e
N
Wideband Noise
I
R = 100 µA
80
µV
rms
10 Hz
≤ f ≤ 10 kHz
∆V
R
Reverse Breakdown Voltage
Long Term Stability
t = 1000 hrs
T = 25˚C ±0.1˚C
120
ppm
I
R = 100 µA
V
HYST
Thermal Hysteresis
(Note 8)
∆T = −40˚C to +125˚C
0.08
%
www.national.com
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