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LM4040 Fiches technique(PDF) 18 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No de pièce LM4040
Description  Precision Micropower Shunt Voltage Reference
Download  31 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4040 Fiches technique(HTML) 18 Page - National Semiconductor (TI)

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LM4040-8.2
Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for T
A =TJ =TMIN to TMAX; all other limits TA =TJ = 25˚C. The grades A and B designate initial Re-
verse Breakdown Voltage tolerances of ±0.1% and ±0.2%, respectively.
Symbol
Parameter
Conditions
Typical
(Note 4)
Units
(Limit)
LM4040AIM3
LM4040BIM3
LM4040AIZ
LM4040BIZ
Limits
Limits
(Note 5)
(Note 5)
V
R
Reverse Breakdown Voltage
I
R = 150 µA
8.192
V
Reverse Breakdown Voltage
Tolerance (Note 6)
I
R = 150 µA
±8.2
±16
mV (max)
±61
±70
mV (max)
I
RMIN
Minimum Operating Current
67
µA
91
91
µA (max)
95
95
µA (max)
∆V
R/
∆T Average Reverse Breakdown
Voltage Temperature
Coefficient(Note 6)
I
R =10 mA
±40
ppm/˚C
I
R =1 mA
±20
±100
±100
ppm/˚C (max)
I
R = 150 µA
±20
ppm/˚C
∆V
R/
∆I
R
Reverse Breakdown Voltage
Change with Operating
Current Change (Note 7)
I
RMIN
≤ I
R
≤ 1 mA
0.6
mV
1.3
1.3
mV (max)
2.5
2.5
mV (max)
1mA
≤ I
R
≤ 15 mA
7.0
mV
10.0
10.0
mV (max)
18.0
18.0
mV (max)
Z
R
Reverse Dynamic
Impedance
I
R = 1 mA, f = 120 Hz,
0.6
I
AC = 0.1 IR
1.5
1.5
Ω (max)
e
N
Wideband Noise
I
R = 150 µA
130
µV
rms
10 Hz
≤ f ≤ 10 kHz
∆V
R
Reverse Breakdown Voltage
Long Term Stability
t = 1000 hrs
T = 25˚C ±0.1˚C
120
ppm
I
R = 150 µA
V
HYST
Thermal Hysteresis
(Note 8)
∆T = −40˚C to +125˚C
0.08
%
www.national.com
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