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1N5711 Fiches technique(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

No de pièce 1N5711
Description  SMALL SIGNAL SCHOTTKY DIODES
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Fabricant  BILIN [Galaxy Semi-Conductor Holdings Limited]
Site Internet  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

1N5711 Fiches technique(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited

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www.galaxycn.com
BL
Document Number 0265001
1.
BLGALAXY ELECTRICAL
FEATURES
For general purpos e applications
MECHANICAL DATA
Cas e:JEDEC DO--35,glas s cas e
Weight: Approx. 0.13 gram
(Ratings at 25
ambient temperature unless otherw ise specif ied)
Min.
UNITS
70.0
V
anA
V
pF
ns
/m W
DO - 35(GLASS)
200.0
Max.
Typ.
TJ
125
0.41
c-55 ---+ 150
fas t s witching and low logic level applications
Polarity: Color band denotes cathode end
Junction tenperature
Pow er dissipation (Inf inite Heat Sink)
ABSOLUTE RATINGS(LIMITING VALUES)
VRRM
2.0
Metal s ilicon s chottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fas t s witching m ake it ideal for protection of
MOS devices ,s teering,bias ing and coupling diodes for
IFSM
UNITS
V
zmW
A
Value
Peak reverse voltage
70.0
400
1)
Symbols
Ptot
1N5711
SMALL SIGNAL SCHOTTKY DIODES
VOLTAGE RANGE: 70V
POWER DISSIPATION: 400 mW
GALAXY ELECTRICAL
IR
V
F
trr
Maximum single cycle surge 10
s square w ave
Junction capacitance @ V
R=0V ,f =1MHz
Reverse recovery time @ I
F=IR=5mA ,rec ov er to 0.1 IR
Forw ard voltage drop
@
I
F=1mA
I
F=15mA
Leakage current
@ V
R=50V
Termal resistance junction to ambient air
CJ
1.0
RθJA
0.3
1
2
Storage temperature range
TSTG
Reverse breakdow n voltage
@ I
R=10
A
Symbols
VR
ELECTRICAL CHARACTERISTICS
1)V alid provided that leads at a distance of 4mm f rom case are kept at ambient temperature


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