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BAS32L Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BAS32L Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 10 page BAS32L_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 3 January 2008 2 of 10 NXP Semiconductors BAS32L High-speed switching diode 2. Pinning information [1] The marking band indicates the cathode. 3. Ordering information 4. Marking [1] black: made in Philippines brown: made in China 5. Limiting values Table 2. Pinning Pin Description Simplified outline Symbol 1 cathode [1] 2 anode ka 006aab040 2 1 Table 3. Ordering information Type number Package Name Description Version BAS32L - hermetically sealed glass surface-mounted package; 2 connectors SOD80C Table 4. Marking codes Type number Marking code[1] BAS32L marking band Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 75 V IF forward current [1] - 200 mA IFRM repetitive peak forward current - 450 mA IFSM non-repetitive peak forward current square wave [2] tp =1 µs- 4 A tp =1ms - 1 A tp = 1 s - 0.5 A Ptot total power dissipation Tamb =25 °C [1] - 500 mW |
Numéro de pièce similaire - BAS32L |
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Description similaire - BAS32L |
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