BTA2008_SER_D_E_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 18 January 2008

2 of 12

NXP Semiconductors

BTA2008 series D and E

0.8 A Three-quadrant triacs high commutation

3.

Ordering information

4.

Limiting values

[1]

Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The

rate of rise of current should not exceed 6 A/

µs.

Table 2.

Ordering information

Type number

Package

Name

Description

Version

BTA2008-600D

TO-92

plastic single-ended leaded (through hole) package; 3 leads

SOT54

BTA2008-600E

BTA2008-800D

BTA2008-800E

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

repetitive peak off-state voltage

BTA2008-600D; BTA2008-600E

[1] -

600

V

BTA2008-800D; BTA2008-800E

-

800

V

RMS on-state current

Figure 4 and 5

-

0.8

A

non-repetitive peak on-state current

surge; see Figure 2 and 3

t = 20 ms

-

9

A

t = 16.7 ms

-

9.9

A

-

0.41

rate of rise of on-state current

-

100

A/

µs

peak gate current

-

1

A

peak gate power

-

5

W

average gate power

over any 20 ms period

-

0.1

W

storage temperature

−40

+150

°C

junction temperature

-

125

°C