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BU808DFI Datasheet(Fiches technique) 1 Page - STMicroelectronics

Numéro de pièce BU808DFI
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON
Télécharger  7 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BU808DFI Datasheet(HTML) 1 Page - STMicroelectronics

  BU808DFI Datasheet HTML 1Page - STMicroelectronics BU808DFI Datenblatt HTML 2Page - STMicroelectronics BU808DFI Datenblatt HTML 3Page - STMicroelectronics BU808DFI Datenblatt HTML 4Page - STMicroelectronics BU808DFI Datenblatt HTML 5Page - STMicroelectronics BU808DFI Datenblatt HTML 6Page - STMicroelectronics BU808DFI Datenblatt HTML 7Page - STMicroelectronics  
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BU808DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER DARLINGTON
s
STMicroelectronics PREFERRED
SALESTYPE
s
NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
s
HIGH VOLTAGE CAPABILITY ( > 1400 V )
s
HIGH DC CURRENT GAIN ( TYP. 150 )
s
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
s
LOW BASE-DRIVE REQUIREMENTS
s
DEDICATED APPLICATION NOTE AN1184
APPLICATIONS
s
COST EFFECTIVE SOLUTION FOR
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
DESCRIPTION
The BU808DFI is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
®
INTERNAL SCHEMATIC DIAGRAM
June 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
VCBO
Collector-Base Voltage (IE = 0)
1400
V
VCEO
Collector-Emit ter Volt age (IB = 0)
700
V
VEBO
Emitt er-Base Voltage (IC =0)
5
V
IC
Collector Current
8
A
ICM
Collector Peak Current (tp <5 ms)
10
A
IB
Base Current
3
A
IBM
Base Peak Current (tp <5 ms)
6
A
Ptot
Tot al Dissipation at Tc =25
oC52
W
Tstg
St orage Temperature
-65 to 150
oC
Tj
Max. Operat ing Junction Temperat ure
150
oC
1
2
3
ISOWATT218
1/7


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