BFY51 datasheet(2/5 Pages) STMICROELECTRONICS

No de pièce	BFY51

Description	MEDIUM POWER AMPLIFIER

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

35

218

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

for BFY50

VCB =60 V

Tcas e =100

oC

for BFY51

VCB =40 V

Tcas e =100

oC

50

2.5

50

2.5

nA

µA

nA

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

Tcase =100

oC

50

2.5

nA

µA

V(BR)CBO

Collect or-Base

Breakdown Volt age

(I E = 0)

IC =100

µA

for BFY50

for BFY51

80

60

V

V(BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =30 mA

for BFY50

for BFY51

35

30

V

V(BR)EBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IC =100

µA6

V

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =150 mA

IB =15 mA

for BFY50

for BFY51

IC =1 A

IB =0.1 A

for BFY50

for BFY51

0. 14

0.7

0.2

0.35

1

1.6

V

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =150 mA

IB =15 mA

IC =1 A

IB =0.1 A

0. 95

1.5

1.3

2

V

hFE

∗

DC Current G ain

for BFY50

IC =10 mA

VCE =10 V

IC =150 mA

VCE =10 V

IC =1A

VCE =10 V

for BFY51

IC =10 mA

VCE =10 V

IC =150 mA

VCE =10 V

IC =1A

VCE =10 V

20

30

15

30

40

15

40

55

30

55

70

40

hfe

∗

Small Signal Current

Gain

VCE =6 V

f =1KHz

IC =1 mA

for BFY50

for BFY51

IC =10 mA

for BFY50

for BFY51

25

30

45

60

fT

Transit ion F requency

IC =50 mA

VCE =10 V

for BFY50

for BFY51

60

50

100

110

MHz

CCBO

Collect or Base

Capacitance

IE =0

VCB = 10 V

f = 1MHz

10

pF

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%

BFY50/BFY51

2/5

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