BD244B datasheet(2/4 Pages) STMICROELECTRONICS

No de pièce	BD244B

Description	COMPLEMENTARY SILICON POWER TRANSISTORS

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

1.92

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collector Cut -of f

Current (VBE =0)

VCE =rated VCEO

0.4

mA

ICEO

Collector Cut -of f

Current (IB =0)

VCE =60 V

0.7

mA

IEBO

Emitt er Cut -of f Current

(IC =0)

VEB =5 V

1

mA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC =30 mA

for BD243B/BD244B

for BD243C/BD244C

80

100

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =6 A

IB =1 A

1.5

V

VBE

∗

Base-Emitt er Voltage

IC =6 A

VCE =4 V

2

V

hFE

∗

DC Current Gain

IC =0.3 A

VCE =4 V

IC =3 A

VCE =4 V

30

15

hfe

Small Signal Current

Gain

IC =0. 5 A

VCE =10 V

f = 1MHz

IC =0. 5 A

VCE =10 V

f = 1KHz

3

20

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

For PNP types voltage and current values are negative.

Safe Operating Area

BD243B / BD243C / BD244B / BD244C

2/4

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