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AM82731-003 Fiches technique(PDF) 1 Page - STMicroelectronics |
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AM82731-003 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 4 page August 1992 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x . 400 2NLFL (S042) hermetically sealed . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . 10:1 VSWR CAPABILITY . LOW THERMAL RESISTANCE . INPUT/OUTPUT IMPEDANCE MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE . POUT = 3.0 W. MIN. WITH 5.7 dB GAIN . BANDWIDTH = 400 MHz DESCRIPTION The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for S- Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 10:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and auto- matic wire bonding techniques ensure high reliability and product consistency. The AM82731-003 is supplied in the hermetic met- al/ceramic package with internal input/output imped- ance matching circuitry, and is intended for military and other high reliability applications. PIN CONNECTION BRANDI NG 82731-3 ORDER CODE AM 82731-003 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t PDISS Power Dissipation* (TC ≤ 100°C) 23 W IC Device Current* 0.9 A VCC Collector-Supply Voltage* 34 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C AM82731-003 1. Collector 3. Emitter 2. Base 4. Base RTH(j-c) Junction-Case Thermal Resistance 6.5 °C/W *Applies only to rated RF amplifier operation THERMAL DATA 1/4 |
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Description similaire - AM82731-003 |
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