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74V1T66S-TR Fiches technique(PDF) 3 Page - STMicroelectronics |
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74V1T66S-TR Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 9 page DC SPECIFICATIONS Symb ol Parameter T est Cond ition s Val ue Un it VCC (V) TA =25 oC -40 to 85 oC Min. Typ . Max. Min . Max. VIH High Level Input Voltage 5.0 (*) 2.0 2.0 V VIL Low Level Input Voltage 0.8 0.8 V RON ON Resistance 5.0 (*) VIC =VIH VI/O =VCC to G ND II/O ≤ 1mA 12 17 20 Ω RON ON Resistance 5.0 (*) VIC =VIH VI/O =VCC or GND II/O ≤ 1mA 10 14 18 Ω IOFF Input/Output Leakage Current (SWITCH OFF) 5.5 VOS =VCC to GND VIS =VCC to GND VIC =VIL ±0.1 ±1.0 µA IIZ Switch Input Leakage Current (SWITCH ON, OUTPUT OPEN) 5.5 VOS =VCC to GND VIC =VIH ±0.1 ±1.0 µA IIN Control Input Leakage Current 0to 5.5 VIC = 5.5V or GND ±0.1 ±1.0 µA ICC Quiescent Supply Current 5.5 VIC =VCC or GND 1 10 µA (*) Voltage range is 5V ± 0.5V AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr =tf =3 ns) Symb ol Parameter Test Co nditi on Val ue Un it VCC (V) TA =25 oC -40 to 85 oC Min. Typ . Max. Min . Max. tPD Delay Time 5.0 (*) 0.1 0.2 1.0 ns tPZL tPZH Output Enable Time 5.0 (*) RL =1k Ω 2.0 4.0 5.0 ns tPLZ tPHZ Output Disable Time 5.0 (*) RL =1k Ω 5.0 7.5 9.0 ns CIN Input Capacitance 5 pF CI/O Switch Terminal Capacitance 10 pF CPD Power Dissipation Capacitance (note 1) 5.0 3 pF 1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN +ICC (switch). (*) Voltage range is 5V ± 0.5V 74V1T66 3/8 |
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