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TS61N45CXRF Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS61N45CXRF Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 7 page TS61 Series Voltage Detector 2/7 Version: A07 Absolute Maximum Rating Parameter Symbol Maximum Unit Input Voltage VIN +12 V Output Current Io 50 mA CMOS (Gnd – 0.3) to (VIN + 0.3) Output Voltage N-channel open drain VOUT (Gnd – 0.3) to 12 V Power Dissipation SOT-23 PD 150 mW Operating Ambient Temperature Range TA -40 ~ +85 oC Storage Temperature TSTG -65 ~ +150 oC Note: Stress above those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation section of the specifications is not implied. Electrical Specifications (Ta = 25 oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Circuit Detect Voltage VDF VDFx 0.98 VDF VDFx 1.02 V 1 Hysteresis range VHYS / VDF 2 -- 8 % 1 VIN=1.5V -- 0.7 2.3 VIN=2.0V -- 0.8 2.7 VIN=3.0V -- 0.9 3.0 VIN=4.0V -- 1.0 3.2 Supply Current VIN=5.0V Iss -- 1.1 3.6 µA 2 Operating Voltage VDF(T)=1.6V~6V VIN 0.7 -- 10.0 V 1 N-channel VDS=5V VIN=1.0V 1.0 2.2 -- VIN=2.0V 3.0 7.7 -- VIN=3.0V 5.0 10.1 -- VIN=4.0V 6.0 11.5 -- VIN=5.0V IOUT 7.0 13.0 -- mA 3 P-channel VDS=2.1V (with CMOS output) Output Current VIN=8.0V IOUT -- -10.0 -2.0 mA 4 Temperature Characteristics -40°C ≤ TA ≤ 85°C ΔVDF ΔTA xVDF -- ±100 -- ppm / °C -- Delay Time Vdr VOUT inversion tDLY -- -- 0.2 ms 5 Note: VDF(T): Established Detect Voltage Value, 1.6V ~ 6.0V ±2% for Standard Voltage Detectors Release Voltage: VDR = VDF + VHYS |
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