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TLOU172P Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce TLOU172P
Description  Panel Circuit Indicator
Download  4 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLOU172P Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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TLOU172P(F)
2007-10-01
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 20mA
2.0
2.4
V
Reverse current
IR
VR = 4V
50
μA
Luminous intensity
IV
IF = 20mA
(Note)
476
1200
mcd
Peak emission wavelength
λp
IF = 20mA
(612)
nm
Spectral line half width
Δλ
IF = 20mA
15
nm
Dominant wavelength
λd
IF = 20mA
605
nm
Note): Lamps are classified into the following ranks according to their luminous intensity. Each packing box includes
single Luminous Intensity class.
R:476-1290mcd, S:850-2300mcd, T:1530 mcd -
Precaution
Please be careful of the followings
• Soldering temperature: 260°C max
Soldering time: 3s max
(Soldering portion of lead: Up to 1.6mm from the body of the device)
• If the lead is formed, the lead should be formed up to 1.6mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
• This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure
that it will not be affected by this IR light.


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